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RV2C002UN nch 20v 180ma small signal mosfet device ideal for partable equipment. 2) drive circuits can be simple. 3) built-in esd protection diode. junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c power dissipation gate - source voltage v gss ? 10 v p d *3 100 mw continuous drain current i d *1 ? 180 ma pulsed drain current i d,pulse *2 ? 600 ma drain - source voltage v dss 20 v taping code t2cl marking ry l absolute maximum ratings (t a = 25c) parameter symbol value unit l packaging specifications type packaging taping l application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 8,000 l features l inner circuit 1) low voltage drive(1.2v) makes this l outline v dss 20v vml1006 r ds(on) (max.) 2.0 w i d 180ma p d 100mw c/w l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *3 - - 1250 * 1 body diode * 2 esd protection diode (1) gate (2) source (3) drain (1) (2) (3) 1/10 2013.11 - rev.a datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved.
RV2C002UN *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 each therminal mounted on a recommended land *4 pulsed - ms transconductance g fs *4 v ds =10v, i d =150ma 110 - w v gs =1.5v, i d =20ma - 2.7 5.4 v gs =4.5v, i d =150ma, t j =125c v gs =1.2v, i d =10ma - 3.8 11.4 2.0 - 2.3 4.6 v gs =2.5v, i d =150ma - 2.6 v gs =1.8v, i d =150ma - 2.2 3.4 static drain - source on - state resistance r ds(on) *4 v gs =4.5v, i d =150ma - 1.4 1.7 v gate threshold voltage v gs (th) v ds = 10v, i d = 100 m a 0.3 - 1.0 m a gate - source leakage current i gss v gs = ? 8v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = 20v, v gs = 0v - - 1 v drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 20 - - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 2/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN ma ma v gs = 0v, i s = 150ma v l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. pulsed source current i sm *2 continuous source current i s *1 - t a = 25c forward voltage v sd *4 - - 1.2 r g = 10 w - 25 - - - 600 - 80 - ns rise time t r *4 i d =75ma - 4 - turn - off delay time t d(off) *4 r l = 133 w - 12 - fall time t f *4 turn - on delay time t d(on) *4 v dd ? 10v, v gs = 4.5v - 3 reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v output capacitance c oss v ds = 10v - 5 unit min. typ. max. pf - - 12 - - 3 - l electrical characteristics (t a = 25c) parameter symbol conditions values 3/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l electrical characteristic curves fig.4 typical output characteristics(ii) 0 0.05 0.1 0.15 0 0.2 0.4 0.6 0.8 1 v gs =1.0v v gs =1.2v t a =25oc pulsed v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.5v 0 0.05 0.1 0.15 0 2 4 6 8 10 v gs =1.0v v gs =1.2v t a =25oc pulsed v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.5v 0 20 40 60 80 100 120 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 fig.1 power dissipation derating curve fig.2 drain current derating curve power dissipation : p d /p d max. [%] drain current dissipation : i d /i d max. (%) fig.3 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] junction temperature : t j [ c] junction temperature : t j [ c] 4/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l electrical characteristic curves 20 25 30 35 40 45 50 -50 0 50 100 150 v gs = 0v i d = 1ma pulsed 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 v ds = 10v i d = 1ma pulsed 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v ds = 10v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.01 0.1 1 10 0.01 0.1 1 v ds = 10v t a = - 25 oc t a =25oc t a =75oc t a =125oc fig.8 transconductance vs. drain current fig.5 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] junction temperature : t j [ c] fig.6 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] drain current : i d [a] transconductance : g fs [s] 5/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l electrical characteristic curves 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 v gs = 10v i d = 150ma pulsed 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 t a =25oc i d = 150ma i d = 10ma 0 1 10 100 0.001 0.01 0.1 1 t a =25oc v gs = 1. 2 v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v 0.1 1 10 100 0.01 0.1 1 v gs = 4.5v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. drain current(i) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.11 static drain - source on - state resistance vs. j unction temperature static drain - source on - state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.12 static drain - source on - state resistance vs. drain current(ii) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 6/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 v gs = 2.5v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.1 1 10 100 0.01 0.1 1 v gs = 1.8v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.1 1 10 100 0.001 0.01 0.1 1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = 1.5v 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 1.2v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.13 static drain - source on - state resistance vs. drain current(iii) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.14 static drain - source on - state resistance vs. drain current(iv) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.15 static drain - source on - state resistance vs. drain current(v) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.16 static drain - source on - state resistance vs. drain current(vi) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 7/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l electrical characteristic curves 1 10 100 0.01 0.1 1 10 100 t a =25oc f=1mhz v gs =0v c oss c rss c iss 1 10 100 1000 0.01 0.1 1 t a =25oc v dd = 10v v gs = 4.5v r g =10 w t r t f t d(on) t d(off) 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 v gs =0v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.18 switching characteristics fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] switching time : t [ns] drain current : i d [a] fig.19 source current vs. source drain voltage source current : i s [a] source - drain voltage : v sd [v] 8/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms l notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 9/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
RV2C002UN l dimensions (unit : mm) vml1006 10/10 2013.11 - rev.a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)

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